Impact of Metal-Work Function and temperature on the performance of Schottky Barrier diode devices
DOI:
https://doi.org/10.37255/jme.v20i3pp113-121Keywords:
Metal-Work Functions, Schottky diode, Barrier height, Electrical behavior, Ideality factor, Metal-semiconductor contacts, thermionic emission.Abstract
N-Aluminum Gallium Arsenide Schottky Diodes are studied by I-V characteristics. Current-voltage characteristics were analyzed for some metal work Functions at a 300K temperature. A significant dependence was observed between this parameter and the electrical parameters. These results demonstrate that it affects the device's performance. Important electrical characteristics, like saturation current (IS), series resistances (RS ), ideality factor (n), and barrier height (bn ), are also defined for various temperature values by analyzing the current-voltage (I-V) behavior. R, b, and n parameters are computed using the Cheung method and the thermionic emission (TE) theory. The ideality factor (n) values were found to drop as temperatures increased, but the barrier height (bn) increased. The ideality factor values at the contact interface were found to exhibit a double Gaussian distribution based on temperature-dependent observations. Comparing the results to the experimental data revealed an equal result. These findings suggest that the n-AlGaAs structure may be effectively utilized in optoelectronic and photovoltaic applications, demonstrating excellent diode properties for solar cells. As a result, the outcomes of this recent research logically support the idea that these Schottky barrier diodes are ideal for effectively harvesting renewable energy.
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