NOVAL ATOMIC LAYER DEPOSITION FOR ADVANCED TUGSTEN NUCLEATION LAYER FOR NANO STRUCTURES
Keywords:
Nucleation layer, CVD, W deposition, CVD FilmAbstract
As the contact size shrinks below 0.13 micron with high aspect ratio, the conventional CVD W can not achieve compete fill due to inadequate step coverage of nucleation process. Thin film of W grown by atomic layer deposition (ALD) with WF6 and B2H6 chemistry technique, on the other hand, shows 100% step coverage confirmed by TEM. It can be applied as an advanced nucleation layer for CVD W deposition. In this paper, we discuss process development for 300mm ALD W chamber and present film characterization results
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References
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